第 13 卷 第 6 期 功能材料与器件学报 Vol. 13, No. 6
2007 年 12 月 JOURNAL OF FUNCTIONAL MATERIALS AND DEVICES Dec., 2007
收稿日期：2007–7–27; 修订日期：2007–00–00
作者简介：董 树荣(1973— ), 男, 副教授, (E-mail：dongshurong@zju.edu.cn).
文章编号：1007–4252(2007)06–0000–4
气体微机电传感系统中的片上 ESD 保护
崔强
1
，董树荣
1
，刘俊杰
1,2
，韩雁
1
(1. 浙江大学微电子与光电子研究所，杭州 310027；2. 美国中佛罗里达大学电机系，奥兰多 32816)
摘要：摘要是本文提出了一种应用于微机电系统嵌入式传感器片上系统新工艺上的静电放电防护器件
的电路结构。这个静电放电防护结构采用了以地端为参考电位的，多指条晶闸管类器件，包括以下几
个部分 1)输入/输出防护，2）电源钳位 3）微机电处理过程中的内部传感器电极。本文也提出了一种
在有限的芯片面积下实现静电放电防护等级要求的多指条版图布局。这种静电放电防护设计体系在器
件级和片上系统级都得到了测试和验证，有效性和鲁棒性都得到了证实。测试数据表明采用了本防护
体系的片上系统在不引入闩锁，漏电流只有 10-10A的情况下承受了 4.1kV的人体放电模式的静电测试。
关键词：静电放电；片上系统气体传感器；微机电系统；晶闸管；回滞曲线
中图分类号：TB 文献标识码：A
On Chip Electrostatic Discharge Protection for MEMS Gas Sensor System
CUI Qiang1，DOND Shu-rong1，LIU Jun-jie1,2，HAN Yan1
(1. Institute of Microelectronics and Photoelectronics , Zhejiang university，Hanzhou 310027，China；
2. Department of Electrical and Computer Engineering, University of Central Florida，Orlando 300072，USA)
Abstract：An on-chip electrostatic discharge (ESD) protection scheme is demonstrated for an emerging technology of
microelectromechanical systems (MEMS)-based embedded sensor (ES) system-on-a-chip (SoC). The ESD protection
scheme is implemented using ground-referenced multifinger thyristor-type devices optimized for 1) the input/output
(I/O) protection, 2) the power supply clamp, and 3) the internal sensors’ electrodes during the micromachining process.
A multiply finger layout scheme was also developed to the ESD protection level under the constraint of chip size. The
ESD protection design methodology was tested and verified at both the device and SoC levels, and its effectiveness
and robustness have been illustrated. Experimental results showed that the SoC passed a 4.1 kV Human Body Model
ESD stress with no latchup induced and a very low leakage current of 10-10 A.
Key words：Electros