Semiconductor Technology Research
Semiconductor Technology Research, Inc.
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CGSim
Module Defects
Ver. 3.9
User Manual
2007
Table of Contents
1.
Models used for elastic stress and defect formation simulation ..........................3
1.1
1.1. Elastic Stress analysis................................................................................3
1.2. Simulation of initial defect incorporation.........................................................5
1.3. Model of point defect clusterization.................................................................6
2 GUI description .......................................................................................................9
2.1 List of crystal positions...................................................................................10
2.2 Program mode and settings.............................................................................11
2.2.1
Edit grid ...................................................................................................11
2.2.2 Calculations..............................................................................................11
2.2.3 Visualization ............................................................................................12
2.2.4
Settings.....................................................................................................12
3.
References..........................................................................................................20
2
The Module Defects operates with *.crystal files created by the CGSim code and, within a license
for basic CGSim, permits solution of elastic stress problem in crystals grown by the Czochralski
method. Within a license for the Module Defects, the user can study also the behavior of initial
defects, i.e. self-interstitials