Electric Field Distribution in the Base
of Semiconductor p-n Junction Diode
N. S. Aramyan
Institute of Radiophysics and Electronics, NAS of Armenia, Ashtarak
Received May 15, 2006
AbstractAn expression for distribution of the electric field in the base of a semiconductor p-n
junction diode is obtained valid for arbitrary injection levels in the approximation of exponential
distribution of non-equilibrium carriers in the diode base. It is shown that at a certain current the field
is constant across the base which allows one to determine the mobility of majority carriers (whose
concentration is determined from the barrier capacity measurements). For commercial D223B and
D219A diodes the current-voltage characteristics and the differential resistance are measured and the
mobility of electrons is calculated. The electric field distribution in the D223B diode is derived at
three injection levels.
PACS numbers: 72.20.i
DOI: 10.3103/S1068337207010070
Key words: semiconductor p-n junction diode, electric field distribution