Home > Products > Micro-Nano Electric Materials > CVD Precursors
The process of heating, plasma excitation, or optical radiation to make gaseous or vaporous chemical
substances react and deposit on the substrate in an atomic state, thereby forming the required solid film or
coating is called chemical vapor deposition (CVD). CVD precursor refers to a gaseous reactant or a volatile
liquid reactant that constitutes a thin film element used in the chemical vapor deposition process. The CVD
precursor is a key material used in the CVD process, and its chemical structure determines the film
properties during the deposition process.
Due to the advantages of rich variety and easy preparation, CVD precursors have very important
applications in the fields of metal thin films and ceramic thin films.
High-k oxide film: High-k oxide film with high dielectric properties is one of the important
microelectronic materials. Chemical vapor deposition (CVD) is the preferred method for preparing high-k
oxide thin films due to its excellent compatibility with semiconductor processes. For the vapor deposition
of Group IVB metal oxides, commonly used metal precursors are mainly metal alkoxides, β-diketone salts
or chlorides, which have certain advantages. However, the precursor contains elements such as C, H or Cl,
so it is easy to remain in the prepared film and deteriorate the film performance. The anhydrous nitrates
of Ti, Zr and Hf have good volatility, and can be used as a new type of carbon-free inorganic precursors to
deposit oxide films such as TiO , ZrO and HfO . In addition, since the nitrate group contains only N and O
elements, contamination of elements such as C, H and Cl is avoided. At the same time, nitrate can only
rely on its own decomposition to form a film without introducing oxidizing reactive gases, which avoids the
pre-reaction of these oxidizing gases with the Si substrate to form a low dielectric constant interface layer.
The aforementioned characteristics make the anhy