CGSim package:
analysis and optimization of semiconductor
and optical crystal growth from the melt and solution
2008
STR Group, Ltd.
C GSim
STR Group, Ltd.
CG
About Semiconductor Technology Research
Semiconductor Technology Research Group (STR) provides consulting services and offers special
ized software for modeling of crystal growth, epitaxy, and semiconductor devices operation. STR
employs highly qualified specialists capable of solving a wide range of practical problems related to
semiconductor technologies.
A comprehensive research underlies every consulting activity and software product which ena
bles careful validation of physical models and approaches applied. STR’s expertise in the crys
tal growth science and device engineering is accumulated in variety of publications in the peer
reviewed journals.
Four product lines are developed and promoted by STR:
Bulk crystal growth from the melt
Bulk crystal growth from the gas phase
Epitaxy and deposition
Operation of advanced semiconductor devices
Modeling of growth from the melt includes detailed 3D simulation of flow dynamics and heat
transfer in a furnace. Such growth techniques as Czochralski (Cz), Liquid Encapsulated Czochralski
(LEC), Vapor Pressure Controlled Czochralski (VCz), Kyropoulos, Bridgman, and Floating Zone of Si,
GaAs, InP, SiGe, sapphire, etc are under study.
The focus of research of growth of widebandgap semiconductors (SiC, AlN, GaN) from the gas phase
is heat and mass transport in the reactor, crystal shape evolution, and stress and defects dynamics.
Simulation of eptiaxy and deposition of various materials (Si, SiC, IIIV and IIINitride compounds)
includes flow dynamics and heat transfer, diffusion, gasphase and surface chemistry, particle for
mation, parasitic deposition on reactor units.
Modeling of advanced semiconductor devices concerns operation of LEDs, FETs, Schottky diodes,
laser diodes, photodetectors, etc. The employed approaches allow prediction of device characteris
tics and optimization of heterostruc