* Confidential treatment has been granted or requested with respect to portions of this exhibit, and such portions
have been replaced with "**". Such confidential portions have been deleted and separately filed with the
Securities and Exchange Commission pursuant to Rule 24b-2.
JOINT DEVELOPMENT AGREEMENT
THIS JOINT DEVELOPMENT AGREEMENT ("Agreement") is entered into and made effective as of April 9,
1997 by and between Ramtron International Corporation, ("Ramtron"), a Delaware corporation having its
principal place of business at 1850 Ramtron Drive, Colorado Springs, Colorado and ULVAC Japan, Ltd.,
("ULVAC"), a Japanese corporation, having its principal place of business at 2500 Hagisono, Chigasaki,
Kanagawa, 253, Japan.
WHEREAS, Ramtron is engaged in the business of designing, integrating, and developing state-of-the-art
ferroelectric semiconductor technology.
WHEREAS, ULVAC is engaged in the business of manufacturing fabrication equipment for the semiconductor
WHEREAS, Ramtron and ULVAC desire to establish a successful relationship in the joint development of
equipment that will optimize the integration and manufacturability of advanced ferroelectrics and semiconductor
NOW THEREFORE, in consideration of the premises hereof and the mutual promises, the parties agree as
1. DESCRIPTION OF DEVELOPMENT PROJECT
Ramtron and ULVAC hereby agree to enter into a cooperative arrangement comprised of at least two (2) phases
under which the parties shall establish a baseline study with respect to FRAM processes for which ULVAC has
developed functional applications. Under the Development Project, the parties shall jointly conduct materials and
process solution experiments to the FRAM fabrication process that shall result in achieving optimal FRAM
performance at the device level, pursuant to the terms and conditions as more fully described in the Statement Of
Work (SOW), labelled Attachment "A" and attached hereto and incorporated herein by reference. It is hereby