Expedient Tech Pte Ltd
2010-5
Ka band 1 watt amplifier chip
ka1W
Frequency Range: 31.5 – 37GHz
Parameter @ 35 GHz
30.8 dBm Nominal Psat
30.0 dBm P1dB
21 dB Nominal Power Gain
Bias: Vd=5.5,6 V @ Vg=-0.7V
0.15 um pHEMT Technology
Chip Dimensions: 3.975 x 1.992 x 0.10 mm
The Ka1W die is produced using standard 0.15um power pHEMT process.
It can replace TGA1141 .
The Ka1W nominally provides 30.8 dBm saturated output power, 33dBm output
power at 1dB Gain compression @ 35 Ghz and has typical gain of 21 dB.
The part is ideally suited for low cost emerging markets such as Communications
Satellites, and Image and SAR Radar.
The Ka1W chip is 100% DC and RF tested on wafer to ensure performance
compliance.
Expedient Tech Pte Ltd
1
7030 Ang Mo Kio Avenue 5 #08-21, NorthStar@AMK Singapore 569880 sales@expedienttech.com
Expedient Tech Pte Ltd
2010-5
Table I, ELECTRICAL CHARACTERISTICS
(Ta = 25 0C, Nominal) Frequency
Range:
31.5 to 37 GHz
Gate Voltage, Vg (D.C.)
>=-0.75 v
Drain Voltage, Vd (D.C.)
+5 v <=Vd<7.5V
Drain Current (Quiescent), Idq
1.9A <Idq<2.2A
PAE
19%～25%
Small Signal Gain, S21 @ Mid-band
18~22dB, typical 21dB
Input Return Loss, S11
to be furnished
Output Return Loss, S22
to be furnished
Output Power, Psat
30.8dBm@Vds=6V
Break down Voltage
>=7V
Working frequency
-50 oC-150 oC
Pinch off Voltage VPo
-1.3~-0.8V
Breakdown Voltage between Gate and
Drain
14V
Threshold Voltage
-2.3~-0.2V
Expedient Tech Pte Ltd
2
7030 Ang Mo Kio Avenue 5 #08-21, NorthStar@AMK Singapore 569880 sales@expedienttech.com
Expedient Tech Pte Ltd
2010-5
Bias condition: Vg1=Vg2=Vg3=Vg4=Vg=-0.75V and
Vd1=Vd2=Vd3=Vd4=Vd=5V at 35GHz
Expedient Tech Pte Ltd
3
7030 Ang Mo Kio Avenue 5 #08-21, NorthStar@AMK Singapore 569880 sales@expedienttech.com
Expedient Tech Pte Ltd
2010-5
Expedient Tech Pte Ltd
4
7030 Ang Mo Kio Avenue 5 #08-21, NorthStar@AMK Singapore 569880 sales@expedienttech.com
Expedient Tech Pte Ltd
2010-5
Expedient Tech Pte Ltd
5
7030 Ang Mo Kio Avenue 5 #08-21, NorthStar@AMK S